102 lines
4.2 KiB
C
102 lines
4.2 KiB
C
#ifndef _NAND_H
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#define _NAND_H
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#include "stm32h7xx.h"
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//升级说明
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//V1.1 20160520
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//1,新增硬件ECC支持(仅在以NAND_ECC_SECTOR_SIZE大小为单位进行读写时处理)
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//2,新增NAND_Delay函数,用于等待tADL/tWHR
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//3,新增NAND_WritePageConst函数,用于搜寻坏块.
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//V1.2 20160525
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//1,去掉NAND_SEC_SIZE宏定义，由NAND_ECC_SECTOR_SIZE替代
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//2,去掉nand_dev结构体里面的secbuf指针，用不到
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//////////////////////////////////////////////////////////////////////////////////
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#define NAND_MAX_PAGE_SIZE 4096 //定义NAND FLASH的最大的PAGE大小（不包括SPARE区），默认4096字节
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#define NAND_ECC_SECTOR_SIZE 512 //执行ECC计算的单元大小，默认512字节
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//NAND属性结构体
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typedef struct
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{
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uint16_t page_totalsize; //每页总大小，main区和spare区总和
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uint16_t page_mainsize; //每页的main区大小
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uint16_t page_sparesize; //每页的spare区大小
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uint8_t block_pagenum; //每个块包含的页数量
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uint16_t plane_blocknum; //每个plane包含的块数量
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uint16_t block_totalnum; //总的块数量
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uint16_t good_blocknum; //好块数量
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uint16_t valid_blocknum; //有效块数量(供文件系统使用的好块数量)
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uint32_t id; //NAND FLASH ID
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uint16_t *lut; //LUT表，用作逻辑块-物理块转换
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uint32_t ecc_hard; //硬件计算出来的ECC值
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uint32_t ecc_hdbuf[NAND_MAX_PAGE_SIZE/NAND_ECC_SECTOR_SIZE];//ECC硬件计算值缓冲区
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uint32_t ecc_rdbuf[NAND_MAX_PAGE_SIZE/NAND_ECC_SECTOR_SIZE];//ECC读取的值缓冲区
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}nand_attriute;
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extern nand_attriute nand_dev; //nand重要参数结构体
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#define NAND_RB (((GPIOD->IDR) >> 6) & 0x1U)//NAND Flash的闲/忙引脚
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#define NAND_ADDRESS 0X80000000 //nand flash的访问地址,接NCE3,地址为:0X8000 0000
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#define NAND_CMD 1<<16 //发送命令
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#define NAND_ADDR 1<<17 //发送地址
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//NAND FLASH命令
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#define NAND_READID 0X90 //读ID指令
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#define NAND_FEATURE 0XEF //设置特性指令
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#define NAND_RESET 0XFF //复位NAND
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#define NAND_READSTA 0X70 //读状态
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#define NAND_AREA_A 0X00
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#define NAND_AREA_TRUE1 0X30
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#define NAND_WRITE0 0X80
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#define NAND_WRITE_TURE1 0X10
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#define NAND_ERASE0 0X60
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#define NAND_ERASE1 0XD0
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#define NAND_MOVEDATA_CMD0 0X00
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#define NAND_MOVEDATA_CMD1 0X35
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#define NAND_MOVEDATA_CMD2 0X85
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#define NAND_MOVEDATA_CMD3 0X10
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//NAND FLASH状态
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#define NSTA_READY 0X40 //nand已经准备好
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#define NSTA_ERROR 0X01 //nand错误
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#define NSTA_TIMEOUT 0X02 //超时
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#define NSTA_ECC1BITERR 0X03 //ECC 1bit错误
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#define NSTA_ECC2BITERR 0X04 //ECC 2bit以上错误
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//NAND FLASH型号和对应的ID号
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#define MT29F4G08ABADA 0XDC909556 //MT29F4G08ABADA
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#define MT29F16G08ABABA 0X48002689 //MT29F16G08ABABA
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#define W29N01GVSIAA 0XF1809500 //W29N01GVSIAA
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#define W29N01HVSINA 0XF1009500 //W29N01HVSINA
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//MPU相关设置
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#define NAND_REGION_NUMBER MPU_REGION_NUMBER3 //NAND FLASH使用region0
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#define NAND_ADDRESS_START 0X80000000 //NAND FLASH区的首地址
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#define NAND_REGION_SIZE MPU_REGION_SIZE_256MB //NAND FLASH区大小
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uint8_t NAND_Init(void);
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uint8_t NAND_ModeSet(uint8_t mode);
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uint32_t NAND_ReadID(void);
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uint8_t NAND_ReadStatus(void);
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uint8_t NAND_WaitForReady(void);
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uint8_t NAND_Reset(void);
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uint8_t NAND_WaitRB(volatile uint8_t rb);
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void NAND_MPU_Config(void);
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uint8_t NAND_ReadPage(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToRead);
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uint8_t NAND_ReadPageComp(uint32_t PageNum,uint16_t ColNum,uint32_t CmpVal,uint16_t NumByteToRead,uint16_t *NumByteEqual);
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uint8_t NAND_WritePage(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToWrite);
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uint8_t NAND_WritePageConst(uint32_t PageNum,uint16_t ColNum,uint32_t cval,uint16_t NumByteToWrite);
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uint8_t NAND_CopyPageWithoutWrite(uint32_t Source_PageNum,uint32_t Dest_PageNum);
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uint8_t NAND_CopyPageWithWrite(uint32_t Source_PageNum,uint32_t Dest_PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToWrite);
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uint8_t NAND_ReadSpare(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToRead);
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uint8_t NAND_WriteSpare(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToRead);
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uint8_t NAND_EraseBlock(uint32_t BlockNum);
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void NAND_EraseChip(void);
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uint16_t NAND_ECC_Get_OE(uint8_t oe,uint32_t eccval);
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uint8_t NAND_ECC_Correction(uint8_t* data_buf,uint32_t eccrd,uint32_t ecccl);
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#endif
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