#include "./nand/bsp_nand.h"

NAND_HandleTypeDef NAND_Handler;    //NAND FLASH句柄
nand_attriute nand_dev;             //nand重要参数结构体

/**
  * @brief  延迟一段时间
  * @param  延迟的时间长度
  * @retval None
  */
static void NAND_Delay(__IO uint32_t nCount)
{
  __IO uint32_t index = 0; 
  for(index = ( nCount); index != 0; index--)
  {
  }
}

//初始化NAND FLASH
uint8_t NAND_Init(void)
{ 
    FMC_NAND_PCC_TimingTypeDef ComSpaceTiming,AttSpaceTiming;
     
    NAND_MPU_Config();  
    NAND_Handler.Instance=FMC_Bank3;
    NAND_Handler.Init.NandBank=FMC_NAND_BANK3;                          //NAND挂在BANK3上
    NAND_Handler.Init.Waitfeature=FMC_NAND_PCC_WAIT_FEATURE_DISABLE;    //关闭等待特性
    NAND_Handler.Init.MemoryDataWidth=FMC_NAND_PCC_MEM_BUS_WIDTH_8;     //8位数据宽度
    NAND_Handler.Init.EccComputation=FMC_NAND_ECC_DISABLE;              //禁止ECC
    NAND_Handler.Init.ECCPageSize=FMC_NAND_ECC_PAGE_SIZE_512BYTE;       //ECC页大小为512字节
    NAND_Handler.Init.TCLRSetupTime=10;                                 //设置TCLR(tCLR=CLE到RE的延时)=(TCLR+TSET+2)*THCLK,THCLK=1/200M=5ns
    NAND_Handler.Init.TARSetupTime=10;                                  //设置TAR(tAR=ALE到RE的延时)=(TAR+TSET+1)*THCLK,THCLK=1/200M=5n。   
   
    ComSpaceTiming.SetupTime=10;         //建立时间
    ComSpaceTiming.WaitSetupTime=10;    //等待时间
    ComSpaceTiming.HoldSetupTime=10;    //保持时间
    ComSpaceTiming.HiZSetupTime=10;     //高阻态时间
    
    AttSpaceTiming.SetupTime=10;         //建立时间
    AttSpaceTiming.WaitSetupTime=10;    //等待时间
    AttSpaceTiming.HoldSetupTime=10;    //保持时间
    AttSpaceTiming.HiZSetupTime=10;     //高阻态时间

    HAL_NAND_Init(&NAND_Handler,&ComSpaceTiming,&AttSpaceTiming); 
    NAND_Reset();       		        //复位NAND
    NAND_Delay(100);
    nand_dev.id=NAND_ReadID();	        //读取ID
    printf("NAND ID:%#x\r\n",nand_dev.id);
		NAND_ModeSet(4);			        //设置为MODE4,高速模式 
    if(nand_dev.id==MT29F16G08ABABA)    //NAND为MT29F16G08ABABA
    {
        nand_dev.page_totalsize=4320;       
        nand_dev.page_mainsize=4096;       
        nand_dev.page_sparesize=224;
        nand_dev.block_pagenum=128;
        nand_dev.plane_blocknum=2048;
        nand_dev.block_totalnum=4096;    
    }
    else if(nand_dev.id==W29N01GVSIAA)//NAND为W29N01GVSIAA
    {
        nand_dev.page_totalsize=2112;
        nand_dev.page_mainsize=2048;
        nand_dev.page_sparesize=64;
        nand_dev.block_pagenum=64;
        nand_dev.plane_blocknum=1024;
        nand_dev.block_totalnum=2048; 
    }else if (nand_dev.id==W29N01HVSINA)
    {
        nand_dev.page_totalsize=2112;
        nand_dev.page_mainsize=2048;
        nand_dev.page_sparesize=64;
        nand_dev.block_pagenum=64;
        nand_dev.plane_blocknum=1024;
        nand_dev.block_totalnum=2048; 
    }
    else return 1;	//错误，返回
    
   
    return 0;
}

/**
 * @brief       NAND FALSH底层驱动,引脚配置，时钟使能
 * @note        此函数会被HAL_NAND_Init()调用
 * @param       无
 * @retval      无
 */
void HAL_NAND_MspInit(NAND_HandleTypeDef *hnand)
{
    GPIO_InitTypeDef GPIO_Initure;
    
    __HAL_RCC_FMC_CLK_ENABLE();             //使能FMC时钟
    __HAL_RCC_GPIOD_CLK_ENABLE();           //使能GPIOD时钟
    __HAL_RCC_GPIOE_CLK_ENABLE();           //使能GPIOE时钟
    __HAL_RCC_GPIOG_CLK_ENABLE();           //使能GPIOG时钟
    
		//初始化PD6 R/B引脚
		GPIO_Initure.Pin=GPIO_PIN_6;
    GPIO_Initure.Mode=GPIO_MODE_INPUT;          //输入
    GPIO_Initure.Pull=GPIO_PULLUP;    			//上拉          
    GPIO_Initure.Speed=GPIO_SPEED_FREQ_VERY_HIGH;         //高速
    HAL_GPIO_Init(GPIOD,&GPIO_Initure);
	   
		//初始化PG9 NCE3引脚
    GPIO_Initure.Pin=GPIO_PIN_9;
    GPIO_Initure.Mode=GPIO_MODE_AF_PP;          //输入
    GPIO_Initure.Pull=GPIO_NOPULL;    			//上拉          
    GPIO_Initure.Speed=GPIO_SPEED_FREQ_VERY_HIGH;         //高速
		GPIO_Initure.Alternate=GPIO_AF12_FMC;       //复用为FMC
    HAL_GPIO_Init(GPIOG,&GPIO_Initure);  
	
    //初始化PD0,1,4,5,11,12,14,15
    GPIO_Initure.Pin=GPIO_PIN_0|GPIO_PIN_1|GPIO_PIN_4|GPIO_PIN_5|\
                     GPIO_PIN_11|GPIO_PIN_12|GPIO_PIN_14|GPIO_PIN_15;
    GPIO_Initure.Pull=GPIO_NOPULL;              
    HAL_GPIO_Init(GPIOD,&GPIO_Initure);

    //初始化PE7,8,9,10
    GPIO_Initure.Pin=GPIO_PIN_7|GPIO_PIN_8|GPIO_PIN_9|GPIO_PIN_10;
    HAL_GPIO_Init(GPIOE,&GPIO_Initure);
}

//配置MPU的region
void NAND_MPU_Config(void)
{
	MPU_Region_InitTypeDef MPU_Initure;
	
	HAL_MPU_Disable();							//配置MPU之前先关闭MPU,配置完成以后在使能MPU
	
	//配置RAM为region1，大小为256MB，此区域可读写
	MPU_Initure.Enable=MPU_REGION_ENABLE;			//使能region
	MPU_Initure.Number=NAND_REGION_NUMBER;			//设置region，NAND使用的region0
	MPU_Initure.BaseAddress=NAND_ADDRESS_START;		//region基地址
	MPU_Initure.Size=NAND_REGION_SIZE;				//region大小
	MPU_Initure.SubRegionDisable=0X00;
	MPU_Initure.TypeExtField=MPU_TEX_LEVEL0;
	MPU_Initure.AccessPermission=MPU_REGION_FULL_ACCESS;	//此region可读写
	MPU_Initure.DisableExec=MPU_INSTRUCTION_ACCESS_ENABLE;	//允许读取此区域中的指令
	MPU_Initure.IsShareable=MPU_ACCESS_NOT_SHAREABLE;
	MPU_Initure.IsCacheable=MPU_ACCESS_NOT_CACHEABLE;
	MPU_Initure.IsBufferable=MPU_ACCESS_BUFFERABLE;
	HAL_MPU_ConfigRegion(&MPU_Initure);
	
	HAL_MPU_Enable(MPU_PRIVILEGED_DEFAULT);			//开启MPU
}

/**
 * @brief       设置NAND速度模式
 * @param       mode    : 0~5, 表示速度模式
 * @retval      0,成功; 其他,失败
 */
uint8_t NAND_ModeSet(uint8_t mode)
{   
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_FEATURE;//发送设置特性命令
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=0X01;		//地址为0X01,设置mode
 	*(__IO uint8_t*)NAND_ADDRESS=mode;					//P1参数,设置mode
	*(__IO uint8_t*)NAND_ADDRESS=0;
	*(__IO uint8_t*)NAND_ADDRESS=0;
	*(__IO uint8_t*)NAND_ADDRESS=0; 
    if(NAND_WaitForReady()==NSTA_READY)return 0;//成功
    else return 1;								//失败
}

/**
 * @brief       读取NAND FLASH的ID
 * @note        不同的NAND略有不同，请根据自己所使用的NAND FALSH数据手册来编写函数
 * @param       无
 * @retval      NAND FLASH的ID值
 */
uint32_t NAND_ReadID(void)
{
    uint8_t deviceid[5]; 
    uint32_t id;  
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_READID; //发送读取ID命令
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=0X00;
	//ID一共有5个字节
    deviceid[0]=*(__IO uint8_t*)NAND_ADDRESS;      
    deviceid[1]=*(__IO uint8_t*)NAND_ADDRESS;  
    deviceid[2]=*(__IO uint8_t*)NAND_ADDRESS; 
    deviceid[3]=*(__IO uint8_t*)NAND_ADDRESS; 
    deviceid[4]=*(__IO uint8_t*)NAND_ADDRESS;  
    //镁光的NAND FLASH的ID一共5个字节，但是为了方便我们只取4个字节组成一个32位的ID值
    //根据NAND FLASH的数据手册，只要是镁光的NAND FLASH，那么一个字节ID的第一个字节都是0X2C
    //所以我们就可以抛弃这个0X2C，只取后面四字节的ID值。
    id=((uint32_t)deviceid[1])<<24|((uint32_t)deviceid[2])<<16|((uint32_t)deviceid[3])<<8|deviceid[4];
    return id;
}  

/**
 * @brief       读NAND状态
 * @param       无
 * @retval      NAND状态值
 *    @arg      bit0:0,成功;1,错误(编程/擦除/READ)
 *    @arg      bit6:0,Busy;1,Ready
 */
uint8_t NAND_ReadStatus(void)
{
    __IO uint8_t data=0; 
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_READSTA;//发送读状态命令
	data++;data++;data++;data++;data++;	//加延时,防止-O2优化,导致的错误.
 	data=*(__IO uint8_t*)NAND_ADDRESS;			//读取状态值
    return data;
}

/**
 * @brief       等待NAND准备好
 * @param       无
 * @retval      NSTA_TIMEOUT 等待超时了
 *              NSTA_READY    已经准备好
 */
uint8_t NAND_WaitForReady(void)
{
    uint8_t status=0;
    __IO uint32_t time=0; 
	while(1)						//等待ready
	{
		status=NAND_ReadStatus();	//获取状态值
		if(status&NSTA_READY)break;
		time++;
		if(time>=0X1FFFF)return NSTA_TIMEOUT;//超时
	}  
    return NSTA_READY;//准备好
}  

/**
 * @brief       复位NAND
 * @param       无
 * @retval      0,成功; 其他,失败
 *              NSTA_READY    已经准备好
 */
uint8_t NAND_Reset(void)
{ 
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_RESET;	//复位NAND
    if(NAND_WaitForReady()==NSTA_READY)return 0;//复位成功
    else return 1;								//复位失败
} 

/**
 * @brief       等待RB信号为某个电平
 * @param       rb:0,等待RB==0; 1,等待RB==1
 * @retval      0,成功; 1,超时
 */
uint8_t NAND_WaitRB(__IO uint8_t rb)
{
    __IO uint16_t time=0;  
	while(time<10000)
	{
		time++;
		if(NAND_RB==rb)return 0;
	}
	return 1;
}

/**
 * @brief       读取NAND Flash的指定页指定列的数据(main区和spare区都可以使用此函数)
 * @param       PageNum         : 要读取的页地址,范围:0~(block_pagenum*block_totalnum-1)
 * @param       ColNum          : 要读取的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
 * @param       *pBuffer        : 指向数据存储区
 * @param       NumByteToRead : 读取字节数(不能跨页读)
 * @retval      0,成功; 其他,错误代码
 */
uint8_t NAND_ReadPage(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToRead)
{
  __IO uint16_t i=0;
	uint8_t res=0;
	uint8_t eccnum=0;		//需要计算的ECC个数，每NAND_ECC_SECTOR_SIZE字节计算一个ecc
	uint8_t eccstart=0;		//第一个ECC值所属的地址范围
	uint8_t errsta=0;
	uint8_t *p;
     *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_A;
    //发送地址
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)ColNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(ColNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)PageNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>16);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_TRUE1;
    //下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
    //将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
    //就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
    //闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
    //代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
	res=NAND_WaitRB(0);			//等待RB=0 
    if(res)return NSTA_TIMEOUT;	//超时退出
    //下面2行代码是真正判断NAND是否准备好的
	res=NAND_WaitRB(1);			//等待RB=1 
    if(res)return NSTA_TIMEOUT;	//超时退出
	if(NumByteToRead%NAND_ECC_SECTOR_SIZE)//不是NAND_ECC_SECTOR_SIZE的整数倍，不进行ECC校验
	{ 
		//读取NAND FLASH中的值
		for(i=0;i<NumByteToRead;i++)
		{
			*(__IO uint8_t*)pBuffer++ = *(__IO uint8_t*)NAND_ADDRESS;
		}
	}else
	{
		eccnum=NumByteToRead/NAND_ECC_SECTOR_SIZE;			//得到ecc计算次数
		eccstart=ColNum/NAND_ECC_SECTOR_SIZE;
		p=pBuffer;
		for(res=0;res<eccnum;res++)
		{
			FMC_Bank3->PCR|=1<<6;						//使能ECC校验 
			for(i=0;i<NAND_ECC_SECTOR_SIZE;i++)				//读取NAND_ECC_SECTOR_SIZE个数据
			{
				*(__IO uint8_t*)pBuffer++ = *(__IO uint8_t*)NAND_ADDRESS;
			}		
			while(!(FMC_Bank3->SR&(1<<6)));				//等待FIFO空	
			nand_dev.ecc_hdbuf[res+eccstart]=FMC_Bank3->ECCR;//读取硬件计算后的ECC值
			FMC_Bank3->PCR&=~(1<<6);						//禁止ECC校验
		} 
		i=nand_dev.page_mainsize+0X10+eccstart*4;			//从spare区的0X10位置开始读取之前存储的ecc值
		NAND_Delay(30);//等待tADL 
		*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=0X05;				//随机读指令
		//发送地址
		*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)i;
		*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(i>>8);
		*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=0XE0;				//开始读数据
		NAND_Delay(30);//等待tADL 
		pBuffer=(uint8_t*)&nand_dev.ecc_rdbuf[eccstart];
		for(i=0;i<4*eccnum;i++)								//读取保存的ECC值
		{
			*(__IO uint8_t*)pBuffer++= *(__IO uint8_t*)NAND_ADDRESS;
		}			
		for(i=0;i<eccnum;i++)								//检验ECC
		{
			if(nand_dev.ecc_rdbuf[i+eccstart]!=nand_dev.ecc_hdbuf[i+eccstart])//不相等,需要校正
			{
				printf("err hd,rd:0x%x,0x%x\r\n",nand_dev.ecc_hdbuf[i+eccstart],nand_dev.ecc_rdbuf[i+eccstart]); 
 				printf("eccnum,eccstart:%d,%d\r\n",eccnum,eccstart);	
				printf("PageNum,ColNum:%d,%d\r\n",PageNum,ColNum);	
				res=NAND_ECC_Correction(p+NAND_ECC_SECTOR_SIZE*i,nand_dev.ecc_rdbuf[i+eccstart],nand_dev.ecc_hdbuf[i+eccstart]);//ECC校验
				if(res)errsta=NSTA_ECC2BITERR;				//标记2BIT及以上ECC错误
				else errsta=NSTA_ECC1BITERR;				//标记1BIT ECC错误
			} 
		} 		
	}
    if(NAND_WaitForReady()!=NSTA_READY)errsta=NSTA_ERROR;	//失败
    return errsta;	//成功   
} 

/**
 * @brief       读取NAND Flash的指定页指定列的数据(main区和spare区都可以使用此函数),并对比(FTL管理时需要)
 * @param       PageNum         : 要读取的页地址,范围:0~(block_pagenum*block_totalnum-1)
 * @param       ColNum          : 要读取的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
 * @param       CmpVal          : 要对比的值,以uint32_t为单位
 * @param       NumByteToRead : 读取字数(以4字节为单位,不能跨页读)
 * @param       NumByteEqual   : 从初始位置持续与CmpVal值相同的数据个数
 * @retval      0,成功; 其他,错误代码
 */
uint8_t NAND_ReadPageComp(uint32_t PageNum,uint16_t ColNum,uint32_t CmpVal,uint16_t NumByteToRead,uint16_t *NumByteEqual)
{
    uint16_t i=0;
	uint8_t res=0;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_A;
    //发送地址
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)ColNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(ColNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)PageNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>16);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_TRUE1;
    //下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
    //将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
    //就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
    //闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
    //代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
	res=NAND_WaitRB(0);			//等待RB=0 
	if(res)return NSTA_TIMEOUT;	//超时退出
    //下面2行代码是真正判断NAND是否准备好的
	res=NAND_WaitRB(1);			//等待RB=1 
    if(res)return NSTA_TIMEOUT;	//超时退出  
    for(i=0;i<NumByteToRead;i++)//读取数据,每次读4字节
    {
		if(*(__IO uint32_t*)NAND_ADDRESS!=CmpVal)break;	//如果有任何一个值,与CmpVal不相等,则退出.
    }
	*NumByteEqual=i;					//与CmpVal值相同的个数
    if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;//失败
    return 0;	//成功   
} 

/**
 * @brief       在NAND一页中写入指定个字节的数据(main区和spare区都可以使用此函数)
 * @param       PageNum         : 要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
 * @param       ColNum          : 要写入的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
 * @param       pBbuffer         : 指向数据存储区
 * @param       NumByteToWrite: 要写入的字节数，该值不能超过该页剩余字节数！！！
 * @retval      0,成功; 其他,错误代码
 */
uint8_t NAND_WritePage(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToWrite)
{
  __IO uint16_t i=0;  
	uint8_t res=0;
	uint8_t eccnum=0;		//需要计算的ECC个数，每NAND_ECC_SECTOR_SIZE字节计算一个ecc
	uint8_t eccstart=0;		//第一个ECC值所属的地址范围
	
	*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE0;
    //发送地址
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)ColNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(ColNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)PageNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>16);
	NAND_Delay(30);//等待tADL 
	if(NumByteToWrite%NAND_ECC_SECTOR_SIZE)//不是NAND_ECC_SECTOR_SIZE的整数倍，不进行ECC校验
	{  
		for(i=0;i<NumByteToWrite;i++)		//写入数据
		{
			*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
		}
	}else
	{
		eccnum=NumByteToWrite/NAND_ECC_SECTOR_SIZE;			//得到ecc计算次数
		eccstart=ColNum/NAND_ECC_SECTOR_SIZE; 
 		for(res=0;res<eccnum;res++)
		{
			FMC_Bank3->PCR|=1<<6;						//使能ECC校验 
			for(i=0;i<NAND_ECC_SECTOR_SIZE;i++)				//写入NAND_ECC_SECTOR_SIZE个数据
			{
				*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
			}		
			while(!(FMC_Bank3->SR&(1<<6)));				//等待FIFO空	
			nand_dev.ecc_hdbuf[res+eccstart]=FMC_Bank3->ECCR;	//读取硬件计算后的ECC值
  			FMC_Bank3->PCR&=~(1<<6);						//禁止ECC校验
		}  
		i=nand_dev.page_mainsize+0X10+eccstart*4;			//计算写入ECC的spare区地址
		NAND_Delay(30);//等待 
		*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=0X85;				//随机写指令
		//发送地址
		*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)i;
		*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(i>>8);
		NAND_Delay(30);//等待tADL 
		pBuffer=(uint8_t*)&nand_dev.ecc_hdbuf[eccstart];
		for(i=0;i<eccnum;i++)					//写入ECC
		{ 
			for(res=0;res<4;res++)				 
			{
				*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
			}
		} 		
	}
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE_TURE1; 
    if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;//失败
    return 0;//成功   
}

/**
 * @brief       在NAND一页中的指定地址开始,写入指定长度的恒定数字
 * @param       PageNum         : 要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
 * @param       ColNum          : 要写入的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
 * @param       cval            : 要写入的指定常数
 * @param       NumByteToWrite  : 要写入的字节数(以4字节为单位)
 * @retval      0,成功; 其他,错误代码
 */
uint8_t NAND_WritePageConst(uint32_t PageNum,uint16_t ColNum,uint32_t cval,uint16_t NumByteToWrite)
{
    uint16_t i=0;  
	*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE0;
    //发送地址
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)ColNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(ColNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)PageNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>16);
	NAND_Delay(30);//等待tADL 
	for(i=0;i<NumByteToWrite;i++)		//写入数据,每次写4字节
	{
		*(__IO uint32_t*)NAND_ADDRESS=cval;
	} 
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE_TURE1; 
    if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;//失败
    return 0;//成功   
}

/**
 * @brief       将一页数据拷贝到另一页,不写入新数据
 * @note        源页和目的页要在同一个Plane内！
 * @param       Source_PageNo  : 源页地址,范围:0~(block_pagenum*block_totalnum-1)
 * @param       Dest_PageNo    : 目的页地址,范围:0~(block_pagenum*block_totalnum-1)
 * @retval      0,成功; 其他,错误代码
 */
uint8_t NAND_CopyPageWithoutWrite(uint32_t Source_PageNum,uint32_t Dest_PageNum)
{
	uint8_t res=0;
    uint16_t source_block=0,dest_block=0;  
    //判断源页和目的页是否在同一个plane中
    source_block=Source_PageNum/nand_dev.block_pagenum;
    dest_block=Dest_PageNum/nand_dev.block_pagenum;
    if((source_block%2)!=(dest_block%2))return NSTA_ERROR;	//不在同一个plane内 
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD0;	//发送命令0X00
    //发送源页地址
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)Source_PageNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Source_PageNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Source_PageNum>>16);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD1;//发送命令0X35 
    //下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
    //将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
    //就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
    //闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
    //代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
	res=NAND_WaitRB(0);			//等待RB=0 
	if(res)return NSTA_TIMEOUT;	//超时退出
    //下面2行代码是真正判断NAND是否准备好的
	res=NAND_WaitRB(1);			//等待RB=1 
    if(res)return NSTA_TIMEOUT;	//超时退出 
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD2;  //发送命令0X85
    //发送目的页地址
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)Dest_PageNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Dest_PageNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Dest_PageNum>>16);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD3;	//发送命令0X10 
    if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;	//NAND未准备好 
    return 0;//成功   
}

/**
 * @brief       将一页数据拷贝到另一页,并且可以写入数据
 * @note        源页和目的页要在同一个Plane内！
 * @param       Source_PageNo  : 源页地址,范围:0~(block_pagenum*block_totalnum-1)
 * @param       Dest_PageNo    : 目的页地址,范围:0~(block_pagenum*block_totalnum-1)
 * @param       ColNo          : 页内列地址,范围:0~(page_totalsize-1)
 * @param       pBuffer        : 要写入的数据
 * @param       NumByteToWrite : 要写入的数据个数
 * @retval      0,成功; 其他,错误代码
 */
uint8_t NAND_CopyPageWithWrite(uint32_t Source_PageNum,uint32_t Dest_PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToWrite)
{
	uint8_t res=0;
  __IO uint16_t i=0;
	uint16_t source_block=0,dest_block=0;  
	uint8_t eccnum=0;		//需要计算的ECC个数，每NAND_ECC_SECTOR_SIZE字节计算一个ecc
	uint8_t eccstart=0;		//第一个ECC值所属的地址范围
    //判断源页和目的页是否在同一个plane中
    source_block=Source_PageNum/nand_dev.block_pagenum;
    dest_block=Dest_PageNum/nand_dev.block_pagenum;
    if((source_block%2)!=(dest_block%2))return NSTA_ERROR;//不在同一个plane内
	*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD0;  //发送命令0X00
    //发送源页地址
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)Source_PageNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Source_PageNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Source_PageNum>>16);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD1;  //发送命令0X35
    
    //下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
    //将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
    //就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
    //闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
    //代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
	res=NAND_WaitRB(0);			//等待RB=0 
	if(res)return NSTA_TIMEOUT;	//超时退出
    //下面2行代码是真正判断NAND是否准备好的
	res=NAND_WaitRB(1);			//等待RB=1 
    if(res)return NSTA_TIMEOUT;	//超时退出 
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD2;  //发送命令0X85
    //发送目的页地址
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)ColNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(ColNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)Dest_PageNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Dest_PageNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Dest_PageNum>>16); 
    //发送页内列地址
	NAND_Delay(30);//等待tADL 
	if(NumByteToWrite%NAND_ECC_SECTOR_SIZE)//不是NAND_ECC_SECTOR_SIZE的整数倍，不进行ECC校验
	{  
		for(i=0;i<NumByteToWrite;i++)		//写入数据
		{
			*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
		}
	}else
	{
		eccnum=NumByteToWrite/NAND_ECC_SECTOR_SIZE;			//得到ecc计算次数
		eccstart=ColNum/NAND_ECC_SECTOR_SIZE; 
 		for(res=0;res<eccnum;res++)
		{
			FMC_Bank3->PCR|=1<<6;							//使能ECC校验 
			for(i=0;i<NAND_ECC_SECTOR_SIZE;i++)				//写入NAND_ECC_SECTOR_SIZE个数据
			{
				*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
			}		
			while(!(FMC_Bank3->SR&(1<<6)));					//等待FIFO空	
			nand_dev.ecc_hdbuf[res+eccstart]=FMC_Bank3->ECCR;	//读取硬件计算后的ECC值
 			FMC_Bank3->PCR&=~(1<<6);						//禁止ECC校验
		}  
		i=nand_dev.page_mainsize+0X10+eccstart*4;			//计算写入ECC的spare区地址
		NAND_Delay(30);//等待 
		*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=0X85;				//随机写指令
		//发送地址
		*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)i;
		*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(i>>8);
		NAND_Delay(30);//等待tADL 
		pBuffer=(uint8_t*)&nand_dev.ecc_hdbuf[eccstart];
		for(i=0;i<eccnum;i++)					//写入ECC
		{ 
			for(res=0;res<4;res++)				 
			{
				*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
			}
		} 		
	}
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD3;	//发送命令0X10 
    if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;	//失败
    return 0;	//成功   
} 

/**
 * @brief       读取spare区中的数据
 * @param       PageNum         : 要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
 * @param       ColNum          : 要写入的spare区地址(spare区中哪个地址),范围:0~(page_sparesize-1)
 * @param       pBuffer         : 接收数据缓冲区
 * @param       NumByteToRead : 要读取的字节数(不大于page_sparesize)
 * @retval      0,成功; 其他,错误代码
 */
uint8_t NAND_ReadSpare(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToRead)
{
    uint8_t temp=0;
    uint8_t remainbyte=0;
    remainbyte=nand_dev.page_sparesize-ColNum;
    if(NumByteToRead>remainbyte) NumByteToRead=remainbyte;  //确保要写入的字节数不大于spare剩余的大小
    temp=NAND_ReadPage(PageNum,ColNum+nand_dev.page_mainsize,pBuffer,NumByteToRead);//读取数据
    return temp;
} 

/**
 * @brief       向spare区中写数据
 * @param       PageNum         : 要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
 * @param       ColNum          : 要写入的spare区地址(spare区中哪个地址),范围:0~(page_sparesize-1)
 * @param       pBuffer         : 要写入的数据首地址
 * @param       NumByteToWrite: 要写入的字节数(不大于page_sparesize)
 * @retval      0,成功; 其他,失败
 */
uint8_t NAND_WriteSpare(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToWrite)
{
    uint8_t temp=0;
    uint8_t remainbyte=0;
    remainbyte=nand_dev.page_sparesize-ColNum;
    if(NumByteToWrite>remainbyte) NumByteToWrite=remainbyte;  //确保要读取的字节数不大于spare剩余的大小
    temp=NAND_WritePage(PageNum,ColNum+nand_dev.page_mainsize,pBuffer,NumByteToWrite);//读取
    return temp;
} 

/**
 * @brief       擦除一个块
 * @param       BlockNum        : 要擦除的BLOCK编号,范围:0-(block_totalnum-1)
 * @retval      0,擦除成功; 其他,擦除失败
 */
uint8_t NAND_EraseBlock(uint32_t BlockNum)
{
	if(nand_dev.id==MT29F16G08ABABA)BlockNum<<=7;  	//将块地址转换为页地址
    else if(nand_dev.id==MT29F4G08ABADA)BlockNum<<=6;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_ERASE0;
    //发送块地址
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)BlockNum;
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(BlockNum>>8);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(BlockNum>>16);
    *(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_ERASE1;
	if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;//失败
    return 0;	//成功   
} 
//全片擦除NAND FLASH
void NAND_EraseChip(void)
{
    uint8_t status;
    uint16_t i=0;
    for(i=0;i<nand_dev.block_totalnum;i++) //循环擦除所有的块
    {
        status=NAND_EraseBlock(i);
        if(status)printf("Erase %d block fail!!，错误码为%d\r\n",i,status);//擦除失败
    }
}

/**
 * @brief       获取ECC的奇数位/偶数位
 * @param       oe      : 0,偶数位; 1,奇数位
 * @param       eccval  : 输入的ecc值
 * @retval      计算后的ecc值(最多16位)
 */
uint16_t NAND_ECC_Get_OE(uint8_t oe,uint32_t eccval)
{
	uint8_t i;
	uint16_t ecctemp=0;
	for(i=0;i<24;i++)
	{
		if((i%2)==oe)
		{
			if((eccval>>i)&0X01)ecctemp+=1<<(i>>1); 
		}
	}
	return ecctemp;
} 

/**
 * @brief       ECC校正函数
 * @param       data_buf    : 数据缓存区
 * @param       eccrd       : 读取出来, 原来保存的ECC值
 * @param       ecccl       : 读取数据时, 硬件计算的ECC值
 * @retval      0,错误已修正; 其他,ECC错误(有大于2个bit的错误,无法恢复)
 */
uint8_t NAND_ECC_Correction(uint8_t* data_buf,uint32_t eccrd,uint32_t ecccl)
{
	uint16_t eccrdo,eccrde,eccclo,ecccle;
	uint16_t eccchk=0;
	uint16_t errorpos=0; 
	uint32_t bytepos=0;  
	eccrdo=NAND_ECC_Get_OE(1,eccrd);	//获取eccrd的奇数位
	eccrde=NAND_ECC_Get_OE(0,eccrd);	//获取eccrd的偶数位
	eccclo=NAND_ECC_Get_OE(1,ecccl);	//获取ecccl的奇数位
	ecccle=NAND_ECC_Get_OE(0,ecccl); 	//获取ecccl的偶数位
	eccchk=eccrdo^eccrde^eccclo^ecccle;
	if(eccchk==0XFFF)	//全1,说明只有1bit ECC错误
	{
		errorpos=eccrdo^eccclo; 
		printf("errorpos:%d\r\n",errorpos); 
		bytepos=errorpos/8; 
		data_buf[bytepos]^=1<<(errorpos%8);
	}else				//不是全1,说明至少有2bit ECC错误,无法修复
	{
		printf("2bit ecc error or more\r\n");
		return 1;
	} 
	return 0;
}